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355nm APD

355nm APD

Imodeli: GD5210Y-0-1-TO5/ GD5210Y-0-2-TO5

Incazelo emfushane:

I-Si avalanche photodiode enendawo enkulu ezwelayo ne-UV ethuthukisiwe.Inikeza ukuzwela okuphezulu kusukela ku-UV kuya ku-NIR.


  • f614 nxa
  • 6 dac49b1
  • 46bb79b
  • 374a78c3

Ipharamitha Yezobuchwepheshe

Omaka bomkhiqizo

Izici

  • I-Frontside chip ekhanyayo eyisicaba
  • Ukusabela ngesivinini esikhulu
  • Inani eliphakeme kakhulu lama-APD

Izinhlelo zokusebenza

  • Ezokwelapha
  • Ibhayoloji

Ipharamitha ye-Photoelectric(@Ta=22±3℃)

Into #

Isigaba sephakheji

Ububanzi bendawo ezwela izithombe(mm)

Ububanzi bempendulo ye-Spectral(nm)

Ukusabela

λ=355nm

φe=1μW

M=100

(A/W)

Umsinga omnyama

M=100

(nA)

I-Temperature Coefficient

Ta=-40℃~85℃

(V/℃)

 

Ingqikithi yamandla

M=100

f=1MHz

(pF)

 

Ukuhlukana

i-voltage

IR=10μA

(V)

I-VR=10V

I-VR=8V

Thayipha.

Ubukhulu.

Okuncane.

Ubukhulu.

I-GD5210Y-0-1-TO5

KUYA-5

1.8

300-1100

0.22

6.75

3

10

0.4

20

80

200

I-GD5210Y-0-2-TO5

KUYA-5

3.0

15

50

50


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