800nm APD
Izici
- I-Frontside chip ekhanyayo eyisicaba
- Ukusabela ngesivinini esikhulu
- Inani eliphakeme kakhulu lama-APD
- Amandla we-junction ephansi
- Umsindo ophansi
Izinhlelo zokusebenza
- Ukwakhiwa kwe-laser
- I-radar ye-laser
- Isexwayiso se-laser
Ipharamitha ye-Photoelectric(@Ta=22±3℃)
Into # | Isigaba sephakheji | Ububanzi bendawo ezwela izithombe(mm) | Ububanzi bempendulo ye-Spectral(nm) |
Ubude be-wavenge bempendulo ephezulu | Ukusabela λ=800nm φe=1μW M=100 (A/W) | Isikhathi sokuphendula λ=800nm RL=50Ω (ns) | Umsinga omnyama M=100 (nA) | I-Temperature Coefficient Ta=-40℃~85℃ (V/℃)
| Ingqikithi yamandla M=100 f=1MHz (pF)
| I-voltage yokuhlukaniswa IR=10μA (V) | ||
Thayipha. | Ubukhulu. | Okuncane | Ubukhulu | |||||||||
I-GD5210Y-1-2-TO46 | KUYA-46 | 0.23 |
400-1100
|
800 |
55
|
0.3 | 0.05 | 0.2 | 0.5 | 1.5 | 80 | 160 |
I-GD5210Y-1-5-TO46 | KUYA-46 | 0.50 | 0.10 | 0.4 | 3.0 | |||||||
I-GD5210Y-1-2-LCC3 | I-LCC3 | 0.23 | 0.05 | 0.2 | 1.5 | |||||||
I-GD5210Y-1-5-LCC3 | I-LCC3 | 0.50 | 0.10 | 0.4 | 3.0 |