905nm APD

Imodeli: GD5210Y-2-2-TO46/ GD5210Y-2-5-TO46/ GD5210Y-2-8-TO46/ GD5210Y-2-2-LCC3/ GD5210Y-2-5-LCC3/ GD5210Y-2-2-P/ I-GD5210Y-2-5-P/ Uhlu

I-Si avalanche photodiode enikeza ukuzwela okuphezulu kusukela ku-UV kuya ku-NIR.Ubude be-wavenge bempendulo ephezulu ngu-905nm.

thola isilinganiso Landa

Ipharamitha Yezobuchwepheshe

I-Frontside chip ekhanyayo eyisicaba
Ukusabela ngesivinini esikhulu
Inani eliphakeme kakhulu lama-APD
Amandla we-junction ephansi
Umsindo ophansi
Usayizi we-array kanye ne-photosensitive surface kungenziwa ngendlela oyifisayo.

Into #	Isigaba sephakheji	Ububanzi bendawo ezwela izithombe(mm)	Ububanzi bempendulo ye-Spectral(nm)	Ubude be-wavenge bempendulo ephezulu (nm)	Ukusabela λ=905nm φe=1μW M=100 (A/W)	Isikhathi sokuphendula λ=905nm R_L=50Ω (ns)	Umsinga omnyama M=100 (nA)		I-Temperature Coefficient Ta=-40℃～85℃ (V/℃)	Ingqikithi yamandla M=100 f=1MHz (pF)	Ukuhlukana i-voltage I_R=10μA (V)
Into #	Isigaba sephakheji	Ububanzi bendawo ezwela izithombe(mm)	Ububanzi bempendulo ye-Spectral(nm)	Ubude be-wavenge bempendulo ephezulu (nm)	Ukusabela λ=905nm φe=1μW M=100 (A/W)	Isikhathi sokuphendula λ=905nm R_L=50Ω (ns)	Thayipha.	Ubukhulu.	I-Temperature Coefficient Ta=-40℃～85℃ (V/℃)	Ingqikithi yamandla M=100 f=1MHz (pF)	Okuncane	Ubukhulu
I-GD5210Y-2-2-TO46	KUYA-46	0.23	400-1100	905	55	0.6	0.2	1.0	0.9	1.0	130	220
I-GD5210Y-2-5-TO46	KUYA-46	0.50					0.4	1.0		1.2
I-GD5210Y-2-8-TO46	KUYA-46	0.80					0.8	2.0		2.0
I-GD5210Y-2-2-LCC3	I-LCC3	0.23					0.2	1.0		1.0
I-GD5210Y-2-5-LCC3	I-LCC3	0.50					0.4	1.0		1.2
I-GD5210Y-2-2-P	Iphakethe lepulasitiki	0.23					0.2	1.0		1.0
I-GD5210Y-2-5-P	Iphakethe lepulasitiki	0.50					0.4	1.0		1.2
Uhlu	PCB	Ngokwezifiso				Ngokusho kwe-photosensitive surface	Ngokusho kwe-photosensitive surface			Ngokusho kwe-photosensitive surface	160	200