I-PIN enamaquadrant amane uchungechunge lweshubhu eyodwa Isithombe Esifakiwe

I-PIN ene-quadrant single tube series

Imodeli: GT111 / GT112 / GD3250Y / GD3249Y / GD3244Y / GD3245Y / GD32413Y / GD32414Y / GD32415Y

Incazelo emfushane:

Idivayisi ingama-silicon PIN photodiode amane aneyunithi efanayo, esebenza ngaphansi kwesimo sokuchema okuhlanekezelwe, ukusabela kwe-spectral kusuka ekukhanyeni okubonakalayo kuye eduze kwe-infrared, ubude beza be-peak impendulo ngu-980nm, futhi impendulo ku-1064nm ingafinyelela ku-0.5A. /W.

thola isilinganiso Landa

Ipharamitha Yezobuchwepheshe

IZICI

ISICELO

Omaka bomkhiqizo

Izici zikagesi wesithombe (＠Ta＝22±3℃)
Imodeli	I-GT111	I-GT112	I-GD3250Y	I-GD3249Y	I-GD3244Y	I-GD3245Y	I-GD32413Y	I-GD32414Y	I-GD32415Y
Ifomu lephakheji	KUYA-8	KUYA-8	KUYA-8	KUYA-20	KUYA-31-7	KUYA-31-7	MBCY026-P6	KUYA-8	MBCY026-W7W
Usayizi wendawo ezwelayo izithombe (mm)	Φ4	Φ6	Φ8	Φ10	Φ10	Φ16	Φ14	Φ5.3	Φ11.3
Ububanzi bempendulo ye-Spectral (nm)	400 ~ 1100	400 ~ 1100	400 ~ 1100	400 ~ 1100	400 ~ 1100	400 ~ 1100	400 ~ 1100	400 ~ 1150	400 ~ 1150
Ubude bewavenge bempendulo ephakeme (nm)	980	980	980	980	980	980	980	980	980
Ukusabela λ=1064nm(A/W)	0.3	0.3	0.3	0.3	0.4	0.4	0.4	0.5	0.5
I-Dark current (nA)	5 (V_R=40V)	7(V_R=40V)	10 (V_R=40V)	15 (V_R=40V)	20 (V_R=135V)	50 (V_R=135V)	40 (V_R=135V)	4.8(V_R=140V)	≤20(V_R=180V)
Isikhathi sokuvuka Ngo = 1064nm RL = 50Ω (ns)	15 (V_R=40V)	20 (V_R=40V)	25 (V_R=40V)	30 (V_R=40V)	20 (V_R=135V)	30 (V_R=135V)	25 (V_R=135V)	15 (V_R=140V)	20 (V_R=180V)
Amandla we-Junction f=1MHz(pF)	5 (V_R=10V)	7(V_R=10V)	10 (V_R=10V)	15 (V_R=10V)	10 (V_R=135V)	10 (V_R=135V)	16 (V_R=135V)	4.2(V_R=140V)	10 (V_R=180V)
I-voltage yokuhlukana (V)	100	100	100	100	300	300	300	≥300	≥250

Umsinga omnyama ophansi

Ukusabela okuphezulu

Ukuvumelana okuhle kwe-quadrant

Indawo encane eyimpumputhe

Inhloso ye-laser, isiqondiso sokulandelela kanye nedivayisi yokuhlola

I-laser micro-positioning, ukuqapha ukufuduka nezinye izinhlelo zokulinganisa ukunemba