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800nmAPD uchungechunge lweshubhu eyodwa

800nmAPD uchungechunge lweshubhu eyodwa

Imodeli: GD5210Y-1-2-T046 / GD5210Y-1-5-T046 / GD5210Y-1-2-LCC3 / GD5210Y-1-5 -LCC3

Incazelo emfushane:

Idivayisi iyi-silicon avalanche photodiode, impendulo ye-spectral isukela ekukhanyeni okubonakalayo kuye kwe-infrared eseduze, kanye ne-wavelength ephezulu yokuphendula ingu-800nm.


  • f614 nxa
  • 6 dac49b1
  • 46bb79b
  • 374a78c3

Ipharamitha Yezobuchwepheshe

IZICI

ISICELO

Omaka bomkhiqizo

Izici zikagesi wesithombe (@Ta=22±3)

Imodeli

I-GD5210Y-1-2-T046

I-GD5210Y-1-5-T046

I-GD5210Y-1-2-LCC3

I-GD5210Y-1-5

-I-LCC3

Ifomu lephakheji

KUYA-46

KUYA-46

I-LCC3

I-LCC3

Ububanzi bomhlaba obuzwe izithombe (mm)

0.23

0.50

0.23

0.50

Ububanzi bempendulo ye-Spectral (nm)

400 ~ 1100

400 ~ 1100

400 ~ 1100

400 ~ 1100

Ubude bewavenge bempendulo ephakeme (nm)

800

800

800

800

λ=800nm ​​Φ=1μW M=100(A/W)

55

55

55

55

Umsinga omnyama

Okujwayelekile

0.05

0.10

0.05

0.10

M=100(nA)

Ubuningi

0.2

0.4

0.2

0.4

Isikhathi sokuphendula λ=800nm ​​R1=50Ω(ns)

0.3

0.3

0.3

0.3

I-coefficient ye-voltage esebenzayo yezinga lokushisa T=-40℃~85℃(V/℃)

0.5

0.5

0.5

0.5

Isamba samandla M=100 f=1MHz(pF)

1.5

3.0

1.5

3.0

I-voltage yokuhlukana IR=10μA(V)

Ubuncane

80

80

80

80

Ubuningi

160

160

160

160


  • Okwedlule:
  • Olandelayo:

  • I-Front Plane Chip Isakhiwo

    Ukusabela kwejubane eliphezulu

    Ukuzuza okuphezulu

    Amandla we-junction ephansi

    Umsindo ophansi

    Ukwakhiwa kwe-laser

    Lidar

    Isexwayiso se-laser