800nmAPD uchungechunge lweshubhu eyodwa
Izici zikagesi wesithombe (@Ta=22±3℃) | |||||
Imodeli | I-GD5210Y-1-2-T046 | I-GD5210Y-1-5-T046 | I-GD5210Y-1-2-LCC3 | I-GD5210Y-1-5 -I-LCC3 | |
Ifomu lephakheji | KUYA-46 | KUYA-46 | I-LCC3 | I-LCC3 | |
Ububanzi bomhlaba obuzwe izithombe (mm) | 0.23 | 0.50 | 0.23 | 0.50 | |
Ububanzi bempendulo ye-Spectral (nm) | 400 ~ 1100 | 400 ~ 1100 | 400 ~ 1100 | 400 ~ 1100 | |
Ubude bewavenge bempendulo ephakeme (nm) | 800 | 800 | 800 | 800 | |
λ=800nm Φ=1μW M=100(A/W) | 55 | 55 | 55 | 55 | |
Umsinga omnyama | Okujwayelekile | 0.05 | 0.10 | 0.05 | 0.10 |
M=100(nA) | Ubuningi | 0.2 | 0.4 | 0.2 | 0.4 |
Isikhathi sokuphendula λ=800nm R1=50Ω(ns) | 0.3 | 0.3 | 0.3 | 0.3 | |
I-coefficient ye-voltage esebenzayo yezinga lokushisa T=-40℃~85℃(V/℃) | 0.5 | 0.5 | 0.5 | 0.5 | |
Isamba samandla M=100 f=1MHz(pF) | 1.5 | 3.0 | 1.5 | 3.0 | |
I-voltage yokuhlukana IR=10μA(V) | Ubuncane | 80 | 80 | 80 | 80 |
Ubuningi | 160 | 160 | 160 | 160 |
I-Front Plane Chip Isakhiwo
Ukusabela kwejubane eliphezulu
Ukuzuza okuphezulu
Amandla we-junction ephansi
Umsindo ophansi
Ukwakhiwa kwe-laser
Lidar
Isexwayiso se-laser