20mJ Laser Target Designator
IMIPHAKATHI YOBUCHWEPHESHE
| Main amapharamitha womthombo wokukhanya we-laser | |
| Laser wavelength | 1064nm±1nm |
| Indlela yokumpompa | ingxenye ye-semiconductor iphampu |
| Phinda imvamisa | 0 ~ 2 0Hz |
| Amandla okukhipha | 20mJ ~ 100mj@20Hz |
| Imodi yokushintsha i-Q | I-Electro-optic Q-switching |
| Ububanzi be-Pulse | 10ns ~ 20ns |
| Ukwehlukana kwe-Beam | ≯0.4mrad (ezinye izidingo zingenziwa ngezifiso) |
| I-Pulse Energy Stability | ＜3%(RMS) |
| Isikhathi sokusebenza esisodwa | ≥60s |
| Inikezwe amandla yi | I-DC 24V±4V |
| Amandla | ＜140W (Okulindile okwamanje ezingeni lokushisa legumbi:＜1A, ukusebenza okuphezulu kwamandla＜6A, izinga lokushisa eliphezulu neliphansi lamanje elilindile＜1A) |
| Imbobo ye-serial yokuxhumana | RS422 |
| Qalisa ukunemba | ≯2μs@20Hz |
| Isisindo | ≤3kg |
| Izinkomba Zesistimu | |
| Imodi yokulinganisa | ukushaya kwenhliziyo |
| Imvamisa ephakathi | 1 ~ 5Hz |
| Ibanga eliphezulu lokulinganisa | ＞8km |
| Ibanga elincane lokulinganisa | Ibanga elincane lokulinganisa |
| Ukunemba okuguquguqukayo | ±3m |
| Ukuvumelana nezimo zemvelo | |
| Izinga lokushisa lokusebenza | -40 ~ 60℃ |
| Izinga lokushisa lesitoreji | -55 ~ 85℃ |
| Ukudlidliza | X, Y, Z izimbazo ezintathu 3g |
| Ukwethuka | X, Y, Z izimbazo ezintathu 15g |
| Usayizi Womkhiqizo | ≤20mm0X160mmX75mm |
