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1064nm APD

1064nm APD

Imodeli: GD6212Y/GD6213Y/GD6219Y

Incazelo emfushane:

I-Si avalanche photodiode enikeza ukuzwela okuphezulu kusukela ku-UV kuya ku-NIR.Ubude bokuphendula okuphezulu ngu-1064nm.Ukuphendula: 36 A/W ku-1064 nm.


  • f614 nxa
  • 6 dac49b1
  • 46bb79b
  • 374a78c3

Ipharamitha Yezobuchwepheshe

Omaka bomkhiqizo

Izici

  • I-Frontside chip ekhanyayo eyisicaba
  • Ukusabela ngesivinini esikhulu
  • Inani eliphakeme kakhulu lama-APD

Izinhlelo zokusebenza

  • Ukwakhiwa kwe-laser
  • Ukuxhumana kwe-Laser
  • Isexwayiso se-laser

Ipharamitha ye-Photoelectric(@Ta=22±3℃

Into #

Isigaba sephakheji

Ububanzi bendawo ezwela izithombe(mm)

Ibanga lempendulo ye-Spectral

(nm)

 

 

I-voltage yokuhlukaniswa

(V)

Ukusabela

M=100

λ=1064nm

(kV/W)

 

 

 

Isikhathi sokukhuphuka

(ns)

Umkhawulokudonsa

(MHz)

I-Temperature Coefficient

Ta=-40℃~85℃

(V/℃)

 

Amandla alingana nomsindo

(pW/√Hz)

 

I-Concentricity (μm)

Uhlobo olushintshiwe kwamanye amazwe

I-GD6212Y

 

 

KUYA-8

 

0.8

 

 

40-1100

350-500

150

8.8

40

2.2

0.15

≤50

C30950

I-GD6213Y

200

2

175

I-C30659-1060-R8BH

I-GD6219Y

3

280

7

50

2.4

0.27

I-C30659-1060-3A


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